630-nm red InGaN micro-light-emitting diodes (<20 ?m × 20 ?m) exceeding 1 mW/mm² for full-color micro-displays

Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots

We have presented broadband full-color monolithic InGaN light-emitting diodes (LEDs) by self-assembled InGaN quantum dots (QDs) using metal organic chemical vapor deposition (MOCVD). The electroluminescence spectra of the InGaN QDs LEDs are extremely broad span from 410 nm to 720 nm with a line-width of 164 nm, covering entire visible wavelength range. A color temperature of 3370 K and a color ...

Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering

InGaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient light sources capable of replacing incandescent bulbs. However, applications of InGaN LEDs are limited to small devices because their fabrication process involves expensive epitaxial growth of InGaN by metalorganic vapor phase epitaxy on single-crystal wafers. If we can utilize a low-cost epitaxial growth pro...

Beam divergence measurements of InGaN/GaN micro-array light-emitting diodes using confocal microscopy

C. Griffin a) , E. Gu, H.W. Choi, C. W. Jeon, J.M. Girkin, and M.D. Dawson Institute of Photonics, University of Strathclyde, 106 Rottenrow, Glasgow G4 0NW, United Kingdom G. McConnell, Centre for Biophotonics, University of Strathclyde 27 Taylor Street, Glasgow G4 0NR, United Kingdom Abstract The recent development of high-density, two-dimensional arrays of micrometer-sized InGaN/GaN light-emi...

Nanostructure engineering of staggered InGaN quantum wells light emitting diodes emitting at 420-510 nm

Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes